Silicon transistors, which are used to amplify and switch signals, are a critical component in most electronic devices, from smartphones to automobiles. But silicon semiconductor technology is held back by a fundamental physical limit that prevents transistors from operating below a certain voltage.
This limit, known as “Boltzmann tyranny,” hinders the energy efficiency of computers and other electronics, especially with the rapid development of artificial intelligence technologies that demand faster computation.
In an effort to overcome this fundamental limit of silicon, MIT researchers fabricated a different type of three-dimensional transistor using a unique set of ultrathin semiconductor materials.
Their devices, featuring vertical nanowires only a few nanometers wide, can deliver performance comparable to state-of-the-art silicon transistors while operating efficiently at much lower voltages than conventional devices.
“This is a technology with the potential to replace silicon, so you could use it with all the functions that silicon currently has, but with much better energy efficiency,” says Yanjie Shao, an MIT postdoc and lead author of a paper on the new transistors.
The transistors leverage quantum mechanical properties to simultaneously achieve low-voltage operation and high performance within an area of just a few square nanometers. Their extremely small size would enable more of these 3D transistors to be packed onto a computer chip, resulting in fast, powerful electronics that are also more energy-efficient.
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